Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Micromachines
سال: 2019
ISSN: 2072-666X
DOI: 10.3390/mi10120815